The
project aims to develop an integrated modeling framework based on fundamental
scientific understanding that encompasses materials properties and processing.
It will comprehensively model the behavior of high strain ferroelectrics
starting at the quantum mechanical level and reaching to device levels,
and address domain wall structure, mobility, patterns, interaction of
domains with grain boundaries and substrates, fatigue and failure. The
results of these models will guide the choice of materials, the choice
of process and the design and prototyping of devices. The modeling efforts
of the synthesis techniques will build on existing models and concentrate
on those areas that are critical for device prototyping.
From
Atoms to Actuators
