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The project aims to develop an integrated modeling framework based on fundamental scientific understanding that encompasses materials properties and processing. It will comprehensively model the behavior of high strain ferroelectrics starting at the quantum mechanical level and reaching to device levels, and address domain wall structure, mobility, patterns, interaction of domains with grain boundaries and substrates, fatigue and failure. The results of these models will guide the choice of materials, the choice of process and the design and prototyping of devices. The modeling efforts of the synthesis techniques will build on existing models and concentrate on those areas that are critical for device prototyping.

From Atoms to Actuators





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